Web28 de abr. de 2000 · A sputter etch of the wafer before Cr deposition increased the coercivity by about 300 Oe. A combination of these techniques may be used to … Web24 de ago. de 1998 · FIG. 4 is a schematic sectional view of a long throw sputter deposition chamber that substantially reduces interference with a parallel magnetic field formed by a circular magnet array without a collimator; FIG. 5 illustrates the effect of chamber pressure on the easy axis coercivity of a magnetic film deposited in a parallel …
Across-wafer nonuniformity of long throw sputter deposition
WebSputter deposition at long-throw distances (15-30 in.) and low pressures (1 mTorr) were developed mainly for the semiconductor industry to deposit metals and dielectrics into … Web28 de abr. de 2000 · We present an optimization of long-throw sputter-deposited Cr/CoCrPt films, specifically for (lifted-off) hard bias applications in an AMR/GMR head. Deposition was carried out in the target-to-substrate (T/S) range of 7–9 in., with pressure down to 0.25 mTorr. On increasing the T/S by 1 in., a 5% reduction in coercivity was … roth netphen
Osaka University Knowledge Archive : OUKA
WebDiscovery. Magnetron sputtering is a highly versatile thin film deposition technique for coating films with excellent adhesion and high density. A type of physical vapor deposition (PVD) coating technology, magnetron sputtering is a plasma-based coating process where a magnetically confined plasma is created near the surface of a target material. Webllimated sputter deposition, 1 •2 elevated temperature/reflow deposition,3.4 long throw sputter deposition,5-8 and most re cently ionized magnetron sputter deposition.9- 11 The film deposition is complicated by the potential need for adhesion layers, diffusion barrier layers and seed layers, all of which WebTitanium sputter deposition at low pressures and long throw distances. Abstract: Sputter deposition of titanium into trench and via topography has been studied under conditions … rothnews.co.uk